TIME RESOLVED VERTICAL TRANSPORT IN GaAs/ALxGa1-xAs SUPERLATTICES
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چکیده
منابع مشابه
Electronic band-structure engineering of GaAs/AlxGa1 xAs quantum well superlattices with substructures
We report a theoretical investigation on the band structures of electrons in both infinite and finite semiconductor quantum well/ barrier superlattices with each unit cell containing alternately two types of materials. When the unit cell of a superlattice, made of GaAs and AlxGa1 xAs, is further divided into four and six sublayers of these two materials, narrower passbands and/or broad stopband...
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We investigate coherent Bloch oscillations in GaAs/AlxGa1-xAs superlattices with electronic miniband widths larger than the optical phonon energy. In these superlattices the Bloch frequency can be tuned into resonance with the optical phonon. Close to resonance a direct coupling of Bloch oscillations to LO phonons is observed which gives rise to the coherent excitation of LO phonons. The densit...
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متن کاملرشد براراستی لایه های GaAs/AlxGa1-xAs و بررسی مشخصات آنها
Five layers of GaAs:Te(n=2x 1018 cm' Alo.4GaQ.6As: Sn(n=5xWI6 em,3}. GaAs, Alo .• GaQ.6As: Ge(p=3xW17 em-3), GaM: GC(p= IXlO18cm 3) were grown by supercooled Liquid Phase Epilaxy on n-GaAs(IOO) substrate. The cooling rate of the furnace was SCI up With U. I"C/min al T=860°C. The firSI layer was grown at T=840°C and Ihe la sl one at T=827°C. The thi ckness were varied between 0.1 10 8,um b...
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تاریخ انتشار 2016